BSS138LT1G vs BSS138L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138LT1G disebabkan oleh onsemi dan BSS138L disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS138LT1G BSS138L
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
Kemasan SOT-23-3 (TO-236) SOT-23-3
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Polarity — N-Channel
Operating Mode — Enhancement Mode
VDS Drain-Source Voltage — 50 V
Continuous Drain Current (Ta) — 200 mA
Power Dissipation (Ta) — 350 mW
RDS(on) Max — 3.5 ohm
Technology — Trench MOSFET, high cell density
Gate Type — Logic Level
Switching Performance — Fast switching, rugged, reliable
Kapasitansi Masukan — [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage — [DATA_NEEDED: VGS max rating]
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Packaging — 3000 units per reel (tape and reel)

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