BSS308PEH6327XTSA1 vs BSS806NEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSS806NEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS308PEH6327XTSA1 BSS806NEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) —
Tipe Transistor P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V 20 V (maximum)
Continuous Drain Current (ID) -2 A (Ta) 2.3 A (Ta)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Rentang Suhu Kerja -55 °C to +150 °C [DATA_NEEDED: operating temperature range]
Paket / Case PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant —
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Part Number — BSS806NEH6327XTSA1
Mode of Operation — Enhancement-mode
On-Resistance RDS(on) — 57 mOhm (maximum)
Paket — PG-SOT23 (SOT-23-3)
Jumlah Pin — 3 (Gate, Drain, Source)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon