BSS308PEH6327XTSA1 vs BSS806NEH6327XTSA1 比較

詳細並排比較 BSS308PEH6327XTSA1 由 Infineon 與 BSS806NEH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS308PEH6327XTSA1 BSS806NEH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) —
電晶體類型 P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V 20 V (maximum)
Continuous Drain Current (ID) -2 A (Ta) 2.3 A (Ta)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
工作溫度範圍 -55 °C to +150 °C [DATA_NEEDED: operating temperature range]
封裝 / 外殼 PG-SOT23 (SOT-23-3) —
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Qualification AEC-Q101 Automotive —
RoHS 狀態 Compliant —
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Part Number — BSS806NEH6327XTSA1
Mode of Operation — Enhancement-mode
On-Resistance RDS(on) — 57 mOhm (maximum)
封裝 — PG-SOT23 (SOT-23-3)
腳位數 — 3 (Gate, Drain, Source)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

資料表與資源

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