BSS308PEH6327XTSA1 vs BSS806NEH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS308PEH6327XTSA1 sa pamamagitan ng Infineon at BSS806NEH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS308PEH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Uri ng Transistor | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -30 V | 20 V (maximum) |
| Continuous Drain Current (ID) | -2 A (Ta) | 2.3 A (Ta) |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | [DATA_NEEDED: operating temperature range] |
| Packhaging / Kaso | PG-SOT23 (SOT-23-3) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 | — |
| Qualification | AEC-Q101 Automotive | — |
| Tindminan RoHS | Compliant | — |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Part Number | — | BSS806NEH6327XTSA1 |
| Mode of Operation | — | Enhancement-mode |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Packhaging | — | PG-SOT23 (SOT-23-3) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |