BSZ065N06LS5ATMA1 vs IPD380P06NMATMA1 Perbandingan

Perbandingan bersamaan detil BSZ065N06LS5ATMA1 dari Infineon dan IPD380P06NMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ065N06LS5ATMA1 IPD380P06NMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 5 logic-level OptiMOS P-channel trench
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) Max 65 A —
Drain Current @ Tc (ID, Tc=25°C) 40 A —
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΩ —
Power Dissipation (PD) Max 46 W —
Gate Threshold Voltage (VGS(th)) 2.3 V —
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V —
Input Capacitance (Ciss) 1.8 nF —
Rentang Suhu Kerja -55°C to +150°C -55 C to +150 C (junction)
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TO252-3 (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
Arus Alir Berlanjut (TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
Level MSL — 1
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

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