DMN3190LDW-7 vs JMTG070N06A Perbandingan
Perbandingan bersamaan detil DMN3190LDW-7 dari Diodes Incorporated dan JMTG070N06A dari Jiejie Micro. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | DMN3190LDW-7 | JMTG070N06A |
|---|---|---|
| Merek | Diodes Incorporated | Jiejie Micro |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | 70 A |
| Power Dissipation (PD) | 320 mW | — |
| Paket | SOT-363 (SC-70-6) 6-pin | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) |
| Tipe Mounting | Surface Mount | Surface Mount (SMD) |
| Suhu Kerja | -55C to +150C | — |
| Configuration | Dual, independent drains | Single N-channel MOSFET |
| Technology | Silicon N-Channel MOSFET | Advanced Trench MOSFET |
| Channel Mode | Enhancement | — |
| Level MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Jiejie Micro (JJW) |
| Part Number | — | JMTG070N06A |
| Polarity / Type | — | N-channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| On-Resistance RDS(ON) | — | < 6 mOhm @ VGS = 10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Single Pulse Avalanche Energy (EAS) | — | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) |
| Lead Status | — | Lead free / RoHS compliant |
| Rentang Suhu Kerja | — | [DATA_NEEDED: TJ max and operating range] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA] |