EP3SE110F780C4LN vs EP3SE50F780C4N Perbandingan

Perbandingan bersamaan detil EP3SE110F780C4LN dari Intel dan EP3SE50F780C4N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE110F780C4LN EP3SE50F780C4N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif NRND
Family Stratix III E Stratix III E
Logic Elements (LE) 107,500 47,500
Logic Array Blocks (LABs) 4,300 —
Embedded Memory 8,936,448 bits —
User I/O Pins 488 —
Paket 780-BBGA, FCBGA (Fine-pitch) 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch
Supply Voltage Core 0.9 V (typical) —
Suhu Kerja 0C to +85C (Commercial) 0C to +85C (C4 commercial grade)
Speed Grade C4 —
Lead-Free / RoHS Yes (N suffix) —
Tipe Mounting Surface Mount (SMT) Surface Mount (BGA)
Process Technology 40 nm TSMC —
DSP Blocks Yes (18x18 multipliers) —
Level MSL 3 (per JEDEC J-STD-020) 3 (per JEDEC J-STD-020, FBGA package)
Tray Packaging Yes (per distributor listings) —
Embedded Memory Bits — 5,760,000
Embedded Memory (M9K/M144K blocks) — 488 (per family datasheet)
Number of LABs — 1900
Maximum User I/Os — 488
DSP Blocks (18x18 multipliers) — 432
PLLs — 12 (per family datasheet)
Maximum Operating Frequency — 717 MHz
Transceiver Channels — Up to 12 (per family, model-dependent)
Transceiver Data Rate — Up to 6.375 Gbps (per Stratix III E family)
Process Node — 40 nm
Tegangan Pemuat — Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail)
Configuration Modes — JTAG, Passive Serial, Fast Passive Parallel
Status RoHS — Lead-free / RoHS compliant
Hard Memory Controller — DDR2/DDR3 SDRAM (per Stratix III E family)

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