EP3SE260F1517C4N vs EP3SE260F1517I3 Perbandingan
Perbandingan bersamaan detil EP3SE260F1517C4N dari Intel dan EP3SE260F1517I3 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3SE260F1517C4N | EP3SE260F1517I3 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Series | Stratix® III E | — |
| Family | Field-Programmable Gate Array (FPGA) | Stratix III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | 976 |
| Paket | 1517-BBGA, FCBGA | 1517-BBGA, FCBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0°C to 85°C | — |
| Core Voltage | 0.9 V | 1.0 V typical |
| Process Node | 65 nm | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Transceiver Data Rate | 12.5 Gbps | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Operating Temperature Grade | — | Industrial |
| Junction Temperature Range | — | -40C to +125C |
| Process Technology | — | 65 nm CMOS |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |