EP3SE260F1517C4N vs EP3SE260F1517I3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260F1517C4N disebabkan oleh Intel dan EP3SE260F1517I3 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3SE260F1517C4N | EP3SE260F1517I3 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Series | Stratix® III E | — |
| Family | Field-Programmable Gate Array (FPGA) | Stratix III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | 976 |
| Kemasan | 1517-BBGA, FCBGA | 1517-BBGA, FCBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0°C to 85°C | — |
| Core Voltage | 0.9 V | 1.0 V typical |
| Process Node | 65 nm | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Transceiver Data Rate | 12.5 Gbps | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Operating Temperature Grade | — | Industrial |
| Junction Temperature Range | — | -40C to +125C |
| Process Technology | — | 65 nm CMOS |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |