EP3SE260F1517C4N vs EP3SE260F1517I3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C4N sa pamamagitan ng Intel at EP3SE260F1517I3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C4N | EP3SE260F1517I3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Series | Stratix® III E | — |
| Family | Field-Programmable Gate Array (FPGA) | Stratix III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | 976 |
| Packhaging | 1517-BBGA, FCBGA | 1517-BBGA, FCBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0°C to 85°C | — |
| Core Voltage | 0.9 V | 1.0 V typical |
| Process Node | 65 nm | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Transceiver Data Rate | 12.5 Gbps | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Operating Temperature Grade | — | Industrial |
| Junction Temperature Range | — | -40C to +125C |
| Process Technology | — | 65 nm CMOS |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |