EP3SE260H780C3N vs EP3SE260F1152C3N Perbandingan

Perbandingan bersamaan detil EP3SE260H780C3N dari Intel dan EP3SE260F1152C3N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE260H780C3N EP3SE260F1152C3N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Stratix® III E Stratix III E
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 —
Number of Pins / Balls 780 —
Paket 780-BBGA, FCBGA (H780) 1152-BBGA, FCBGA
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja 0 °C to +85 °C (C grade, commercial) 0 C to +85 C (Commercial)
Process Technology 40 nm CMOS 65 nm
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] —
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] Integrated high-speed transceivers
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] Yes (dedicated multiplier/accumulator)
Status RoHS Compliant (lead-free 'N' suffix) Compliant
Tingkat Sensitivitas Kekeringan (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Core Voltage — 1.1 V
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

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