EP3SE260H780C3N vs EP3SE260F1152C3N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260H780C3N disebabkan oleh Intel dan EP3SE260F1152C3N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SE260H780C3N EP3SE260F1152C3N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Stratix® III E Stratix III E
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 —
Number of Pins / Balls 780 —
Kemasan 780-BBGA, FCBGA (H780) 1152-BBGA, FCBGA
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi 0 °C to +85 °C (C grade, commercial) 0 C to +85 C (Commercial)
Process Technology 40 nm CMOS 65 nm
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] —
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] Integrated high-speed transceivers
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] Yes (dedicated multiplier/accumulator)
Status RoHS Compliant (lead-free 'N' suffix) Compliant
Tingkat sensitiviti Air Nama (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Core Voltage — 1.1 V
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

Laporan Datasheet & Sumber

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