EP3SE80F1152C3N vs EP3SE260F1152C3N Perbandingan
Perbandingan bersamaan detil EP3SE80F1152C3N dari Intel dan EP3SE260F1152C3N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Intel
EP3SE260F1152C3N - Stratix III E FPGA, 255K LE, 744 I/O, 1152-FBGA | Intel
EP3SE260F1152C3N ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | EP3SE80F1152C3N | EP3SE260F1152C3N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Series | Stratix III E | Stratix III E |
| Logic Elements (LEs) | 80,000 | — |
| Total Memory Bits | 6,843,392 bits | — |
| Number of LABs/CLBs | 3200 | — |
| Number of User I/O | 744 | — |
| Jumlah Output | 744 | — |
| Paket / Case | 1152-BBGA, FCBGA (FineLine BGA) | — |
| Suhu Kerja | 0C to +85C (commercial, C3 grade) | 0 C to +85 C (Commercial) |
| Speed/Power Grade | C3 | — |
| Process Technology | 40 nm CMOS | 65 nm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Level MSL | 3 (per JEDEC J-STD-020) | — |
| Configuration Memory | SRAM-based, volatile (needs external config device) | — |
| Status RoHS | Compliant | Compliant |
| Logic Elements / Cells | — | 255,000 |
| Embedded Memory Bits | — | 16,672,768 bits |
| Logic Array Blocks (LABs) | — | 10,200 |
| User I/O Count | — | 744 |
| Paket | — | 1152-BBGA, FCBGA |
| Core Voltage | — | 1.1 V |
| Transceivers | — | Integrated high-speed transceivers |
| DSP Blocks | — | Yes (dedicated multiplier/accumulator) |
| Embedded Memory Type | — | TriMatrix (true dual-port, FIFO, ROM, RAM) |
| External Memory Support | — | DDR3, DDR2, QDR II+, RLDRAM II |
| Configuration Modes | — | AS, AP, PS, FPP, JTAG |
| Partial Reconfiguration | — | Supported |
| Programmable Power Technology | — | Yes (up to 50% dynamic power reduction) |