EP4CE115F23I7N vs EP4CE75F29I7 Perbandingan

Perbandingan bersamaan detil EP4CE115F23I7N dari Intel dan EP4CE75F29I7 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP4CE115F23I7N EP4CE75F29I7
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV E Cyclone IV E
Family EP4CE115 (F23 package) —
Logic Elements (LE) 114,480 —
Embedded Memory Bits 3,981,312 bits —
Maximum User I/Os 280 —
Logic Array Blocks (LABs) 7,180 —
Number of PLLs 4 —
18x18 Hardware Multipliers 266 —
Core Voltage 1.0 V / 1.2 V —
I/O Voltage Banks 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
Suhu Kerja -40C to +100C (Industrial) -40 °C to +100 °C (Industrial)
Paket 484-FBGA (F23) 23x23 mm, 1.0 mm pitch 780-ball FBGA (FineLine BGA)
Tipe Mounting Surface Mount Surface Mount (BGA)
Process Technology 60 nm low-power CMOS (TSMC) —
Configuration Method JTAG, Active Serial, Active Parallel —
Level MSL 3 3 (168 hours)
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory (bits) — 2,810,880
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
PLLs — 4
User I/O Count — 426
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS)
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM

Spek dan Sumber

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