EP4CE115F23I7N vs EP4CE75F29I7 比較

詳細並排比較 EP4CE115F23I7N 由 Intel 與 EP4CE75F29I7 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP4CE115F23I7N EP4CE75F29I7
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Series Cyclone IV E Cyclone IV E
Family EP4CE115 (F23 package) —
Logic Elements (LE) 114,480 —
Embedded Memory Bits 3,981,312 bits —
Maximum User I/Os 280 —
Logic Array Blocks (LABs) 7,180 —
Number of PLLs 4 —
18x18 Hardware Multipliers 266 —
Core Voltage 1.0 V / 1.2 V —
I/O Voltage Banks 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
工作溫度 -40C to +100C (Industrial) -40 °C to +100 °C (Industrial)
封裝 484-FBGA (F23) 23x23 mm, 1.0 mm pitch 780-ball FBGA (FineLine BGA)
安裝類型 Surface Mount Surface Mount (BGA)
Process Technology 60 nm low-power CMOS (TSMC) —
Configuration Method JTAG, Active Serial, Active Parallel —
MSL 等級 3 3 (168 hours)
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory (bits) — 2,810,880
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
PLLs — 4
User I/O Count — 426
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS)
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM

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