EP4CE115F23I7N vs EP4CE75F29I7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE115F23I7N sa pamamagitan ng Intel at EP4CE75F29I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE115F23I7N EP4CE75F29I7
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone IV E Cyclone IV E
Family EP4CE115 (F23 package) —
Logic Elements (LE) 114,480 —
Embedded Memory Bits 3,981,312 bits —
Maximum User I/Os 280 —
Logic Array Blocks (LABs) 7,180 —
Number of PLLs 4 —
18x18 Hardware Multipliers 266 —
Core Voltage 1.0 V / 1.2 V —
I/O Voltage Banks 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
Temperature na Operasyon -40C to +100C (Industrial) -40 °C to +100 °C (Industrial)
Packhaging 484-FBGA (F23) 23x23 mm, 1.0 mm pitch 780-ball FBGA (FineLine BGA)
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Process Technology 60 nm low-power CMOS (TSMC) —
Configuration Method JTAG, Active Serial, Active Parallel —
Level ng MSL 3 3 (168 hours)
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory (bits) — 2,810,880
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
PLLs — 4
User I/O Count — 426
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS)
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM

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