EP4CE115F23I7N vs EP4CE75F29I7 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE115F23I7N disebabkan oleh Intel dan EP4CE75F29I7 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP4CE115F23I7N EP4CE75F29I7
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV E Cyclone IV E
Family EP4CE115 (F23 package) —
Logic Elements (LE) 114,480 —
Embedded Memory Bits 3,981,312 bits —
Maximum User I/Os 280 —
Logic Array Blocks (LABs) 7,180 —
Number of PLLs 4 —
18x18 Hardware Multipliers 266 —
Core Voltage 1.0 V / 1.2 V —
I/O Voltage Banks 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
Suhu Operasi -40C to +100C (Industrial) -40 °C to +100 °C (Industrial)
Kemasan 484-FBGA (F23) 23x23 mm, 1.0 mm pitch 780-ball FBGA (FineLine BGA)
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Process Technology 60 nm low-power CMOS (TSMC) —
Configuration Method JTAG, Active Serial, Active Parallel —
Aras MSL 3 3 (168 hours)
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory (bits) — 2,810,880
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
PLLs — 4
User I/O Count — 426
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS)
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM

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