H5AN8G6NCJR-PBC vs K4A8G165WC-BCRC Perbandingan
Perbandingan bersamaan detil H5AN8G6NCJR-PBC dari SK hynix dan K4A8G165WC-BCRC dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5AN8G6NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electro-Mechanics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $19,69 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| Ukuran Memori | 8 Gbit | 8 Gbit |
| Laju Data | [DATA_NEEDED: exact speed grade of -PBC suffix] | 2400 Mbps |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | FBGA-96 (96-ball fine-pitch BGA) | 96-FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | 0 C to +95 C |
| Antarmuka | Parallel, synchronous to both clock edges | Parallel, 16-bit DDR |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| Status RoHS | Compliant | Compliant |
| Organisasi | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| Tegangan Pemuat | — | 1.2 V (1.14 V to 1.26 V) |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Fitur | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |