H5AN8G6NCJR-PBC vs K4A8G165WC-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NCJR-PBC sa pamamagitan ng SK hynix at K4A8G165WC-BCRC sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $19.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| Laki ng Memory | 8 Gbit | 8 Gbit |
| Rate ng Data | [DATA_NEEDED: exact speed grade of -PBC suffix] | 2400 Mbps |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-96 (96-ball fine-pitch BGA) | 96-FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | 0 C to +95 C |
| Interface | Parallel, synchronous to both clock edges | Parallel, 16-bit DDR |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| Tindminan RoHS | Compliant | Compliant |
| Organisasyon | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| Volte ng Pagbibigay | — | 1.2 V (1.14 V to 1.26 V) |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |