H5AN8G6NCJR-VKC vs H5AN8G6NCJR-RDC Perbandingan

Perbandingan bersamaan detil H5AN8G6NCJR-VKC dari SK hynix dan H5AN8G6NCJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5AN8G6NCJR-VKC H5AN8G6NCJR-RDC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $19,69
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Ukuran Memori 8 Gbit —
Memory Organization 512M x 16 —
Laju Data 2666 Mbps (MT/s) —
Clock Frequency 1.333 GHz —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Antarmuka Parallel —
Suhu Kerja 0C to +95C —
Paket FBGA-96 —
Tipe Mounting Surface Mount Surface Mount
Standby Current 28 mA —
Operating Current 45 mA —
Fitur Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration —
Lead-Free / Halogen-Free Yes (per datasheet description) —
Status RoHS Compliant Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet)
Status Lingkungan Hidup Active —
Memory Density — 8 Gb (8589934592 bit)
Organisasi — 512M x 16
Technology — CMOS
Package Code — TFBGA (PBGA96)
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER
Data Rate Family — [DATA_NEEDED: specific speed grade Mbps]
Supply Voltage Class — [DATA_NEEDED: nominal VDD per datasheet speed bin]
Rentang Suhu Kerja — [DATA_NEEDED: min/max C per -RDC bin]
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Write Leveling — Yes
CRC — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes

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