H5AN8G6NCJR-VKC vs H5AN8G6NCJR-RDC 比較
詳細並排比較 H5AN8G6NCJR-VKC 由 SK hynix 與 H5AN8G6NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NCJR-VKC | H5AN8G6NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $19.69 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| 資料速率 | 2666 Mbps (MT/s) | — |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| 介面 | Parallel | — |
| 工作溫度 | 0C to +95C | — |
| 封裝 | FBGA-96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| 功能特色 | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| RoHS 狀態 | Compliant | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) |
| 生命週期狀態 | Active | — |
| Memory Density | — | 8 Gb (8589934592 bit) |
| 組織 | — | 512M x 16 |
| Technology | — | CMOS |
| Package Code | — | TFBGA (PBGA96) |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| Data Rate Family | — | [DATA_NEEDED: specific speed grade Mbps] |
| Supply Voltage Class | — | [DATA_NEEDED: nominal VDD per datasheet speed bin] |
| 工作溫度範圍 | — | [DATA_NEEDED: min/max C per -RDC bin] |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |