H5AN8G8NAFR-RDC vs K4A8G085WC-BCRC Perbandingan
Perbandingan bersamaan detil H5AN8G8NAFR-RDC dari SK hynix dan K4A8G085WC-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NAFR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasi | 1G x 8 (x8) | 1G x 8 |
| Antarmuka | DDR4 (Double Data Rate 4) | — |
| Speed Grade | -RDC (DDR4-2666 class) | — |
| Laju Data | 2666 MT/s (per -R speed grade suffix) | 2400 Mbps (DDR4-2400) |
| Core Supply Voltage (VDD) | 1.2 V | — |
| I/O Supply Voltage (VDDQ) | 1.2 V | — |
| Wordline Supply (VPP) | 2.5 V | — |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) | — |
| Burst Length | 8 (BL8) | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Paket | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature range] | 0C to +95C |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Status RoHS | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Tegangan Pemuat | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |