H5AN8G8NAFR-RDC vs K4A8G085WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-RDC disebabkan oleh SK hynix dan K4A8G085WC-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasi | 1G x 8 (x8) | 1G x 8 |
| Antaramuka | DDR4 (Double Data Rate 4) | — |
| Speed Grade | -RDC (DDR4-2666 class) | — |
| Kadar Data | 2666 MT/s (per -R speed grade suffix) | 2400 Mbps (DDR4-2400) |
| Core Supply Voltage (VDD) | 1.2 V | — |
| I/O Supply Voltage (VDDQ) | 1.2 V | — |
| Wordline Supply (VPP) | 2.5 V | — |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) | — |
| Burst Length | 8 (BL8) | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature range] | 0C to +95C |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |