H5AN8G8NAFR-RDC vs K4A8G085WC-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix at K4A8G085WC-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasyon | 1G x 8 (x8) | 1G x 8 |
| Interface | DDR4 (Double Data Rate 4) | — |
| Speed Grade | -RDC (DDR4-2666 class) | — |
| Rate ng Data | 2666 MT/s (per -R speed grade suffix) | 2400 Mbps (DDR4-2400) |
| Core Supply Voltage (VDD) | 1.2 V | — |
| I/O Supply Voltage (VDDQ) | 1.2 V | — |
| Wordline Supply (VPP) | 2.5 V | — |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) | — |
| Burst Length | 8 (BL8) | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature range] | 0C to +95C |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |