IAUC120N06S5L011ATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5L011ATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5L011ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 60 V (S5 generation) OptiMOS™ 6 100V
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Avalanche Energy Rated Yes (EAS) —
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Rentang Suhu Kerja — -55°C to +175°C (TJ max, per datasheet)
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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IAUC120N06S5L011ATMA1

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