IAUC120N06S5L011ATMA1 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5L011ATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC120N06S5L011ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 60 V (S5 generation) OptiMOS™ 6 100V
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8 FL (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Avalanche Energy Rated Yes (EAS) —
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Gambaran Suhu Operasi — -55°C to +175°C (TJ max, per datasheet)
Lead-Free — Yes
Boson Bebas — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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