IAUCN04S7L005ATMA1 vs IAUCN04S7N019GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L005ATMA1 dari Infineon dan IAUCN04S7N019GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L005ATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 (trench N-channel MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
Rentang Suhu Kerja -55°C to +175°C (Tj) [DATA_NEEDED: junction temperature range from datasheet]
Paket PG-TDSON-8-43 (TDSON-8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per family datasheet)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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