IAUCN04S7L005ATMA1 vs IAUCN04S7N019GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L005ATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L005ATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 (trench N-channel MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
Gambaran Suhu Operasi -55°C to +175°C (Tj) [DATA_NEEDED: junction temperature range from datasheet]
Kemasan PG-TDSON-8-43 (TDSON-8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per family datasheet)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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