IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L033ATMA1 dari Infineon dan BSZ0904NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L033ATMA1 BSZ0904NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) [DATA_NEEDED: VGS max rating]
Rentang Suhu Kerja -55°C to +175°C (TJ) -55C to +150C
Paket PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TSDSON-8-FL (PQFN 3.3x3.3)
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) JEDEC qualified for target applications
Technology OptiMOS 7 trench MOSFET OptiMOS (N-channel power MOSFET)
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020, typical for this package) —
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta=25C — 18 A
Continuous Drain Current (ID) at Tc=25C — 40 A
On-State Resistance RDS(on) max at VGS=4.5V — 4 mOhm
On-State Resistance RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) at VGS=10V]
Power Dissipation at Ta — 2.1 W
Power Dissipation at Tc — 37 W
Integrated Schottky-like Diode — Yes (monolithic)
Avalanche Rated — 100% avalanche tested
Lead Plating — Pb-free
Bebas Halogen — Yes

Spek dan Sumber

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