IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L033ATMA1 disebabkan oleh Infineon dan BSZ0904NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L033ATMA1 BSZ0904NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) [DATA_NEEDED: VGS max rating]
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55C to +150C
Kemasan PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TSDSON-8-FL (PQFN 3.3x3.3)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) JEDEC qualified for target applications
Technology OptiMOS 7 trench MOSFET OptiMOS (N-channel power MOSFET)
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, typical for this package) —
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta=25C — 18 A
Continuous Drain Current (ID) at Tc=25C — 40 A
On-State Resistance RDS(on) max at VGS=4.5V — 4 mOhm
On-State Resistance RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) at VGS=10V]
Power Dissipation at Ta — 2.1 W
Power Dissipation at Tc — 37 W
Integrated Schottky-like Diode — Yes (monolithic)
Avalanche Rated — 100% avalanche tested
Lead Plating — Pb-free
Boson Bebas — Yes

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