IAUCN10S5L280DATMA1 vs IAUCN08S7L013ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUCN08S7L013ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L280DATMA1 IAUCN08S7L013ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 7
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Paket PG-TDSON-8-61 (SSO8) PG-TDSON-8-53 (TDSON-8 FL)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
Rentang Suhu Kerja -55C to +175C (junction) -55 °C to +175 °C
Jumlah Pin 8 —
Level MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Packing Tape & Reel (T&R) —
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on) max) — 1.26 mΩ
Arus Alir Berlanjut (TC=25°C) — [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) — 293 A
Power Dissipation (TC) — 219 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage range]
Gate Drive Voltage (typical) — 10 V
Qualification — AEC-Q101 (automotive)
Packaging — Tape & Reel (suffix ATMA1)

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