IAUCN10S5L280DATMA1 vs IAUCN08S7L013ATMA1 比較

詳細並排比較 IAUCN10S5L280DATMA1 由 Infineon 與 IAUCN08S7L013ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 啟用中
Infineon
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 ✓ 啟用中

規格比較

參數 IAUCN10S5L280DATMA1 IAUCN08S7L013ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 7
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
封裝 PG-TDSON-8-61 (SSO8) PG-TDSON-8-53 (TDSON-8 FL)
安裝類型 Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
工作溫度範圍 -55C to +175C (junction) -55 °C to +175 °C
腳位數 8 —
MSL 等級 1 [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Packing Tape & Reel (T&R) —
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on) max) — 1.26 mΩ
連續汲極電流 (TC=25°C) — [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) — 293 A
Power Dissipation (TC) — 219 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage range]
Gate Drive Voltage (typical) — 10 V
Qualification — AEC-Q101 (automotive)
Packaging — Tape & Reel (suffix ATMA1)

資料表與資源

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