IGLR70R200D2SXUMA1 vs IGL65R080D2XUMA1 Perbandingan
Perbandingan bersamaan detil IGLR70R200D2SXUMA1 dari Infineon dan IGL65R080D2XUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGLR70R200D2SXUMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN G5 |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN-on-Si, 200 mm wafer |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 18 A |
| Power Dissipation (PD, Tc) | 34 W | 81 W |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Rentang Suhu Kerja | -40 °C to +150 °C | -55 °C to +150 °C (TJ) |
| Paket | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-TSON-8-U06 (ThinPAK 8x8) |
| RoHS | Compliant | — |
| Tipe Transistor | — | N-Channel GaN HEMT (enhancement-mode) |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Tipe Mounting | — | Surface Mount, wettable flank |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 (per JEDEC J-STD-020, where stated) |