IGLR70R200D2SXUMA1 vs IGL65R080D2XUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGLR70R200D2SXUMA1 sa pamamagitan ng Infineon at IGL65R080D2XUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IGLR70R200D2SXUMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN G5 |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN-on-Si, 200 mm wafer |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 18 A |
| Power Dissipation (PD, Tc) | 34 W | 81 W |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Hanay ng Temperature na Operasyon | -40 °C to +150 °C | -55 °C to +150 °C (TJ) |
| Packhaging | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-TSON-8-U06 (ThinPAK 8x8) |
| RoHS | Compliant | — |
| Uri ng Transistor | — | N-Channel GaN HEMT (enhancement-mode) |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Uri ng Pagpapasok | — | Surface Mount, wettable flank |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, where stated) |