IGLR70R270D2SXUMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil IGLR70R270D2SXUMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IGLR70R270D2SXUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | OptiMOS 7 Power-Transistor |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Trench MOSFET, silicon |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 40 V |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Paket | PG-TSON-8-8 (ThinPAK) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| Status RoHS | Compliant | — |
| Rentang Suhu Kerja | -40C to +150C (junction) | -55 °C to +175 °C (TJ) |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| Level MSL | — | MSL 1 (per JEDEC J-STD-020) |