IGLR70R270D2SXUMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGLR70R270D2SXUMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGLR70R270D2SXUMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 OptiMOS 7 Power-Transistor
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Trench MOSFET, silicon
Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V 40 V
Continuous Drain Current (ID, Tc) 7.3 A —
Power Dissipation (PD, Tc) 28 W —
On-State Resistance (RDS(on), typ.) 270 mΩ —
Packhaging PG-TSON-8-8 (ThinPAK) PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) —
Wafer Process 200 mm (8-inch) GaN-on-Si —
Tindminan RoHS Compliant —
Hanay ng Temperature na Operasyon -40C to +150C (junction) -55 °C to +175 °C (TJ)
Reverse Recovery Charge (Qrr) 0 nC (no body diode) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
Level ng MSL — MSL 1 (per JEDEC J-STD-020)

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