IGLT65R035D2ATMA1 vs IGLR70R200D2SXUMA1 Perbandingan
Perbandingan bersamaan detil IGLT65R035D2ATMA1 dari Infineon dan IGLR70R200D2SXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGLT65R035D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolGaN G5 |
| Tipe Transistor | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | -40 °C to +150 °C |
| Paket | PG-HDSOP-16-8 (top-side cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Tipe Mounting | Surface Mount | — |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Channel Type | — | N-Channel |
| Technology | — | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |