IGLT65R035D2ATMA1 vs IGLR70R200D2SXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGLT65R035D2ATMA1 sa pamamagitan ng Infineon at IGLR70R200D2SXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
IGLT65R035D2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IGLT65R035D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolGaN G5 |
| Uri ng Transistor | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | -40 °C to +150 °C |
| Packhaging | PG-HDSOP-16-8 (top-side cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Uri ng Pagpapasok | Surface Mount | — |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Channel Type | — | N-Channel |
| Technology | — | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |