IGT65R025D2ATMA1 vs IGLR70R200D2SXUMA1 Perbandingan
Perbandingan bersamaan detil IGT65R025D2ATMA1 dari Infineon dan IGLR70R200D2SXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGT65R025D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | CoolGaN G5 |
| Tipe Transistor | N-Channel GaN HEMT, enhancement-mode | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id, Tc) | 70 A | — |
| Power Dissipation (Pd, Tc) | 236 W | — |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) | — |
| Paket | PG-HSOF-8 (source-down, bottom-cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Tipe Mounting | Surface Mount | — |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Rentang Suhu Kerja | -55C to +150C (junction, typical) | -40 °C to +150 °C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | GaN HEMT (E-mode, enhancement-mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | — |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | — |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |