IGT65R025D2ATMA1 vs IGLR70R200D2SXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGT65R025D2ATMA1 disebabkan oleh Infineon dan IGLR70R200D2SXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGT65R025D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | CoolGaN G5 |
| Jenis Transistor | N-Channel GaN HEMT, enhancement-mode | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id, Tc) | 70 A | — |
| Power Dissipation (Pd, Tc) | 236 W | — |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) | — |
| Kemasan | PG-HSOF-8 (source-down, bottom-cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Jenis Pemasangan | Surface Mount | — |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gambaran Suhu Operasi | -55C to +150C (junction, typical) | -40 °C to +150 °C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | GaN HEMT (E-mode, enhancement-mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | — |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | — |
| Status RoHS | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |