IGT65R025D2ATMA1 vs IGLR70R200D2SXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGT65R025D2ATMA1 sa pamamagitan ng Infineon at IGLR70R200D2SXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IGT65R025D2ATMA1 IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 ✓ Nakahanda
Infineon
IGLR70R200D2SXUMA1 IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGT65R025D2ATMA1 IGLR70R200D2SXUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN Gen2 (G5) CoolGaN G5
Uri ng Transistor N-Channel GaN HEMT, enhancement-mode —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id, Tc) 70 A —
Power Dissipation (Pd, Tc) 236 W —
On-State Resistance (Rds(on)) 25 mΩ (typical, per MPN suffix) —
Packhaging PG-HSOF-8 (source-down, bottom-cooled) PG-TSON-8-8 (surface mount, ThinPAK top-cooled)
Uri ng Pagpapasok Surface Mount —
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +150C (junction, typical) -40 °C to +150 °C
Technology GaN-on-Si, 200 mm wafer, wide-bandgap GaN HEMT (E-mode, enhancement-mode)
Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Output Charge (Qoss) [DATA_NEEDED: Qoss typical value] —
Reverse Recovery Charge (Qrr) Near-zero (GaN characteristic) —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 700 V
Continuous Drain Current (ID, Tc) — 9.3 A
Power Dissipation (PD, Tc) — 34 W
On-Resistance (RDS(on), max) — 200 mΩ
Total Gate Charge (Qg) — 1.26 nC
Output Capacitance (Coss) — 91 pF
Reverse Transfer Capacitance (Crss) — 0.21 pF
Gate Threshold Voltage (VGS(th), typ) — 1.2 V
RoHS — Compliant

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