IPA60R190C6XKSA1 vs IPP60R180P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPA60R190C6XKSA1 dari Infineon dan IPP60R180P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPA60R190C6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Rentang Suhu Kerja | -55C to +150C | -55 °C to +150 °C |
| Paket | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Status RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS P7 (Superjunction N-Channel) |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |
| Level MSL | — | N/A (through-hole) |