IPA60R190C6XKSA1 vs IPP60R180P7XKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPA60R190C6XKSA1 disebabkan oleh Infineon dan IPP60R180P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPA60R190C6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 °C to +150 °C |
| Kemasan | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Status RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS P7 (Superjunction N-Channel) |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Bilangan Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |
| Aras MSL | — | N/A (through-hole) |