IPA60R190C6XKSA1 vs IPP60R180P7XKSA1 比較
詳細並排比較 IPA60R190C6XKSA1 由 Infineon 與 IPP60R180P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPA60R190C6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| 工作溫度範圍 | -55C to +150C | -55 °C to +150 °C |
| 封裝 | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS P7 (Superjunction N-Channel) |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |
| MSL 等級 | — | N/A (through-hole) |