IPB038N12N3GATMA1 vs BSC039N06NSATMA1 Perbandingan
Perbandingan bersamaan detil IPB038N12N3GATMA1 dari Infineon dan BSC039N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB038N12N3GATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Paket / Case | PG-TO263-3 (D2PAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 (TrenchFET-style) |
| Gate Drive | Logic-level compatible | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Paket | — | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Jumlah Pin | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Level MSL | — | [DATA_NEEDED: MSL rating] |