IPB038N12N3GATMA1 vs BSC039N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB038N12N3GATMA1 disebabkan oleh Infineon dan BSC039N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB038N12N3GATMA1 BSC039N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 120V —
FET Type N-Channel —
Drain-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) @ Tc 120 A —
Power Dissipation (Pd) @ Tc 300 W —
On-State Resistance (Rds(on)) 3.8 mOhm (typical) —
Kemasan / Case PG-TO263-3 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS trench MOSFET OptiMOS 5 (TrenchFET-style)
Gate Drive Logic-level compatible —
Gambaran Suhu Operasi -55C to +175C (junction) —
Standard Package Quantity 1000 (Tape & Reel) —
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Series — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA — 19 A
Continuous Drain Current (ID) at TC — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value at TC]
On-Resistance RDS(on) max at VGS=10V — 3.9 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Power Dissipation at TA (PD) — 2.5 W
Power Dissipation at TC (PD) — 69 W
Suhu Hubungan Operasi — -55C to +150C
Kemasan — PG-TDSON-8-6 (TDSON EP, 5x6 mm)
Bilangan Pin — 8
Gate Drive Voltage (VGS) — ±20 V max
Aras MSL — [DATA_NEEDED: MSL rating]

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