IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 Perbandingan
Perbandingan bersamaan detil IPB051N15NM6ATMA1 dari Infineon dan IPB110P06LMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB051N15NM6ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Continuous Drain Current (ID) at TC=25C | 139 A | -100 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | — |
| Gate Charge (Qg) Typical | 51 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 234 W | — |
| Rentang Suhu Kerja | -55C to +175C | -55 C to +175 C (TJ) |
| Paket / Case | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Source, Gate) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes | — |
| Technology | — | OptiMOS (trench MOSFET) |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |