IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 比較
詳細並排比較 IPB051N15NM6ATMA1 由 Infineon 與 IPB110P06LMATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ 啟用中規格比較
| 參數 | IPB051N15NM6ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Continuous Drain Current (ID) at TC=25C | 139 A | -100 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | — |
| Gate Charge (Qg) Typical | 51 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 234 W | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C (TJ) |
| 封裝 / 外殼 | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Drain, Source, Gate) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes | — |
| Technology | — | OptiMOS (trench MOSFET) |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |