IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB051N15NM6ATMA1 disebabkan oleh Infineon dan IPB110P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB051N15NM6ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Continuous Drain Current (ID) at TC=25C | 139 A | -100 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | — |
| Gate Charge (Qg) Typical | 51 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 234 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C (TJ) |
| Kemasan / Case | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Drain, Source, Gate) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes | — |
| Technology | — | OptiMOS (trench MOSFET) |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |