IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB051N15NM6ATMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB051N15NM6ATMA1 IPB110P06LMATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
FET Type N-Channel P-Channel
Drain-Source Voltage (VDS) 150 V -60 V
Continuous Drain Current (ID) at TA=25C 18 A —
Continuous Drain Current (ID) at TC=25C 139 A -100 A
RDS(on) Typical at VGS=10 V 5.1 mOhm —
Gate Charge (Qg) Typical 51 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 234 W —
Hanay ng Temperature na Operasyon -55C to +175C -55 C to +175 C (TJ)
Packhaging / Kaso PG-TO263-3-2 (D2PAK) PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Drain, Source, Gate) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) —
Avalanche Rated Yes —
Technology — OptiMOS (trench MOSFET)
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
Lead-Free — Yes

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